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BD244 PDF预览

BD244

更新时间: 2024-11-02 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 91K
描述
SILICON PNP POWER TRANSISTORS

BD244 数据手册

 浏览型号BD244的Datasheet PDF文件第2页浏览型号BD244的Datasheet PDF文件第3页 
BD244 – A – B – C  
SILICON PNP POWER TRANSISTORS  
The BD244 series are PNP power transistors in a TO-220 envelope.  
They are intended for use in medium power linear and switching applications.  
The complementary is BD243, A, B, C  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
BD244  
-45  
-60  
-80  
-100  
-45  
-60  
-80  
-100  
-5.0  
-6  
BD244A  
BD244B  
BD244C  
BD244  
BD244A  
BD244B  
BD244C  
VCEO  
Collector-Emitter Voltage (IB= 0mA)  
V
VCBO  
Collector-Base Voltage (IE= 0mA)  
V
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage(IC= 0mA)  
Collector Current  
Collector Current-Peak  
Base Current  
V
A
-10  
-2  
A
TC = 25°  
C
PT  
Collector Power Dissipation  
65  
W
TJ  
TS  
Junction Temperature  
Storage Temperature  
150  
-65 to +150  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
RthJA  
Junction to Case Thermal Resistance  
Junction to free air Thermal Resistance  
1.92  
62.5  
°C / W  
°C / W  
25/09/2012  
COMSET SEMICONDUCTORS  
1/3  

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PNP SILICON POWER TRANSISTORS