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BD244A

更新时间： 2024-11-25 04:09:11
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管开关局域网
页数 文件大小 规格书
5页 106K
描述
PNP SILICON POWER TRANSISTORS

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中文翻译

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BD244A 数据手册

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BD244, BD244A, BD244B, BD244C  
PNP SILICON POWER TRANSISTORS  
●
Designed for Complementary Use with the  
BD243 Series  
TO-220 PACKAGE  
(TOP VIEW)  
●
●
●
●
65 W at 25°C Case Temperature  
6 A Continuous Collector Current  
10 A Peak Collector Current  
1
2
3
B
C
E
Customer-Specified Selections Available  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD244  
-55  
BD244A  
BD244B  
BD244C  
BD244  
-70  
Collector-emitter voltage (RBE = 100 Ω)  
VCER  
V
-90  
-115  
-45  
BD244A  
BD244B  
BD244C  
-60  
Collector-emitter voltage (IC = -30 mA)  
VCEO  
V
-80  
-100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
-5  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
-6  
-10  
A
-3  
65  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
W
W
mJ  
°C  
°C  
°C  
2
2
½LIC  
62.5  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
250  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,  
BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.  
V
JUNE 1973 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1
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BD244A 替代型号

型号 品牌 替代类型 描述 数据表
BD540-S BOURNS

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