BD2227G-LBTR

更新时间： 2024-11-28 13:02:03

品牌	Logo	应用领域
罗姆 - ROHM		存储开关
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BD2227G-LBTR 数据手册

Power Management Switch ICs for PCs and Digital Consumer Products

1ch Small Package

High Side Switch ICs

for USB Devices and Memory Cards

BD2226G, BD2227G

No.11029EBT18

●Description

BD2226G and BD2227G are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal

Serial Bus (USB) applications. BD2226G and BD2227G are equipped with the function of over-current detection, thermal

shutdown, under-voltage lockout and soft-start.

●Features

1) Low On-Resistance (Typ. 150mΩ) N-channel MOSFET Built-in

2) Over-Current Detection

3) Thermal Shutdown

4) Open-Drain Fault Flag Output

5) Under-Voltage Lockout

6) Soft-Start Circuit

7) Input Voltage Range: 2.7V ~ 5.5V

8) Control Input Logic Active-High (BD2226G), Active-Low (BD2227G)

9) SSOP5 Package

●Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

VIN

Ratings

-0.3 ~ 6.0

Unit

VIN supply voltage

EN(/EN) input voltage

/OC voltage

VEN(/EN)

V/OC

I/OC

/OC sink current

VOUT voltage

VOUT

TSTG

-0.3 ~ VIN + 0.3

-55 ~ 150

675 ^*1

Storage temperature

Power dissipation

℃

*1 Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1℃ above 25℃

This IC is not designed to be radiation-proof.

●Operating Conditions

Parameter

Ratings

Typ.

Symbol

VIN

Unit

Min.

2.7

Max.

5.5

VIN operating voltage

Operating temperature

5.0

TOPR

-40

℃

www.rohm.com

2011.05 - Rev.B

1/12

12 3 4 5 6 7...13

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