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BD2232G PDF预览

BD2232G

更新时间: 2024-01-20 02:56:17
品牌 Logo 应用领域
罗姆 - ROHM 存储开关
页数 文件大小 规格书
13页 316K
描述
1ch Small Package High Side Switch ICs for USB Devices and Memory Cards

BD2232G 数据手册

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Power Management Switch ICs for PCs and Digital Consumer Products  
1ch Small Package  
High Side Switch ICs  
for USB Devices and Memory Cards  
BD2232G, BD2233G  
No.11029EAT23  
Description  
BD2232G and BD2233G are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal  
Serial Bus (USB) applications. BD2232G and BD2233G are equipped with the function of over-current detection, thermal  
shutdown, under-voltage lockout and soft-start.  
Features  
1) Low On-Resistance (Typ. 100m) N-channel MOSFET Built-in  
2) Output Discharge Function  
3) Over-Current Detection  
4) Thermal Shutdown  
5) Open-Drain Fault Flag Output  
6) Under-Voltage Lockout  
7) Soft-Start Circuit  
8) Input Voltage Range: 2.7V ~ 5.5V  
9) Control Input Logic Active-High (BD2232G), Active-Low (BD2233G)  
10) SSOP5 Package  
Absolute Maximum Ratings (Ta=25)  
Parameter  
VIN supply voltage  
EN(/EN) input voltage  
/OC voltage  
Symbol  
VIN  
Ratings  
-0.3 ~ 6.0  
-0.3 ~ 6.0  
-0.3 ~ 6.0  
5
Unit  
V
VEN(/EN)  
V/OC  
I/OC  
V
V
/OC sink current  
VOUT voltage  
mA  
V
VOUT  
TSTG  
Pd  
-0.3 ~ VIN + 0.3  
-55 ~ 150  
675 *1  
Storage temperature  
Power dissipation  
mW  
*1 Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1above 25℃  
This IC is not designed to be radiation-proof.  
*
Operating Conditions  
Parameter  
Ratings  
Typ.  
Symbol  
VIN  
Unit  
V
Min.  
2.7  
Max.  
5.5  
VIN operating voltage  
Operating temperature  
5.0  
-
TOPR  
-40  
85  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.02 - Rev.A  
1/12  

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