5秒后页面跳转
BD2227G-TR PDF预览

BD2227G-TR

更新时间: 2024-11-28 13:05:55
品牌 Logo 应用领域
罗姆 - ROHM 存储开关
页数 文件大小 规格书
13页 294K
描述
Power Supply Support Circuit, Fixed, 1 Channel, PDSO5, SSOP-5

BD2227G-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SSOP
包装说明:LSSOP,针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:9 weeks
风险等级:1.64可调阈值:NO
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDSO-G5
长度:2.9 mm信道数量:1
功能数量:1端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.25 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.6 mmBase Number Matches:1

BD2227G-TR 数据手册

 浏览型号BD2227G-TR的Datasheet PDF文件第2页浏览型号BD2227G-TR的Datasheet PDF文件第3页浏览型号BD2227G-TR的Datasheet PDF文件第4页浏览型号BD2227G-TR的Datasheet PDF文件第5页浏览型号BD2227G-TR的Datasheet PDF文件第6页浏览型号BD2227G-TR的Datasheet PDF文件第7页 
Power Management Switch ICs for PCs and Digital Consumer Products  
1ch Small Package  
High Side Switch ICs  
for USB Devices and Memory Cards  
BD2226G, BD2227G  
No.11029EBT18  
Description  
BD2226G and BD2227G are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal  
Serial Bus (USB) applications. BD2226G and BD2227G are equipped with the function of over-current detection, thermal  
shutdown, under-voltage lockout and soft-start.  
Features  
1) Low On-Resistance (Typ. 150m) N-channel MOSFET Built-in  
2) Over-Current Detection  
3) Thermal Shutdown  
4) Open-Drain Fault Flag Output  
5) Under-Voltage Lockout  
6) Soft-Start Circuit  
7) Input Voltage Range: 2.7V ~ 5.5V  
8) Control Input Logic Active-High (BD2226G), Active-Low (BD2227G)  
9) SSOP5 Package  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Symbol  
VIN  
Ratings  
-0.3 ~ 6.0  
-0.3 ~ 6.0  
-0.3 ~ 6.0  
5
Unit  
V
VIN supply voltage  
EN(/EN) input voltage  
/OC voltage  
VEN(/EN)  
V/OC  
I/OC  
V
V
/OC sink current  
VOUT voltage  
mA  
V
VOUT  
TSTG  
Pd  
-0.3 ~ VIN + 0.3  
-55 ~ 150  
675 *1  
Storage temperature  
Power dissipation  
mW  
*1 Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1above 25℃  
This IC is not designed to be radiation-proof.  
*
Operating Conditions  
Parameter  
Ratings  
Typ.  
Symbol  
VIN  
Unit  
V
Min.  
2.7  
Max.  
5.5  
VIN operating voltage  
Operating temperature  
5.0  
-
TOPR  
-40  
85  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.B  
1/12  

与BD2227G-TR相关器件

型号 品牌 获取价格 描述 数据表
BD223 ONSEMI

获取价格

TRANSISTOR TRANSISTOR,BJT,PNP,70V V(BR)CEO,5A I(C),TO-220AB, BIP General Purpose Power
BD2232G ROHM

获取价格

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards
BD2232G-GTR ROHM

获取价格

Buffer/Inverter Based Peripheral Driver,
BD2232G-TR ROHM

获取价格

Buffer/Inverter Based Peripheral Driver, PDSO5, SSOP-5
BD2233G ROHM

获取价格

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards
BD2233G-GTR ROHM

获取价格

Buffer/Inverter Based Peripheral Driver,
BD2233G-TR ROHM

获取价格

Buffer/Inverter Based Peripheral Driver, PDSO5, SSOP-5
BD2239N5050AHF ANAREN

获取价格

Balun 2.2GHZ-3.9GHZ 50/50 0404
BD224 ONSEMI

获取价格

TRANSISTOR TRANSISTOR,BJT,PNP,40V V(BR)CEO,5A I(C),TO-220AB, BIP General Purpose Power
BD2240G ROHM

获取价格

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards