Datasheet > BD135 BD137 BD139

BD135 BD137 BD139

更新时间： 2025-08-18 18:54:27

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
4页	3166K
描述
Pcm(mW) : 1.25; Ic(mA) : 1.5; BVCBO(V) : 45/60/80; BVCEO(V) : 45/60/80; BVEBO(V) : 5; Min : 40; Max : 250; VCE (sat) (v) : 0.5; Package Outline : TO-126;

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BD135 BD137 BD139 数据手册

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DONGGUAN NANJING ELECTRONICS LTD.,

TO-126 Plastic-Encapsulate Transistors

BD135 / BD137 / BD139 TRANSISTOR (NPN)

TO – 126

FEATURES

1. EMITTER

2. COLLECTOR

3. BASE

High Current

Complement To BD136, BD138 And BD140

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

BD137

BD139

BD135

BD135,BD137,BD139,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ

//,ꢄode ꢀ

ORDERING INFORMATION

Part Number

BD135

Package

Packing Method

Pack Quantity

200pcs/Bag

TO-126

Bulk

BD137

BD139

Bulk

Tube

BD135-TU

BD137-TU

BD139-TU

60pcs/Tube

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

BD135

BD137

V_CBO

Collector-Base Voltage

BD139

BD135

Collector-Emitter Voltage

V_CEO

BD137

BD139

V_EBO

I_C

Emitter-Base Voltage

Collector Current

1.5

P_C

Collector Power Dissipation

1.25

100

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

℃/W

℃

-55~+150

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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