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BD13516S PDF预览

BD13516S

更新时间: 2023-09-03 20:28:58
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 255K
描述
1.5 A, 45V NPN Power Bipolar Junction Transistor

BD13516S 技术参数

是否无铅:不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:2 weeks
风险等级:0.78Is Samacsys:N
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):13 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

BD13516S 数据手册

 浏览型号BD13516S的Datasheet PDF文件第2页浏览型号BD13516S的Datasheet PDF文件第3页浏览型号BD13516S的Datasheet PDF文件第4页浏览型号BD13516S的Datasheet PDF文件第5页浏览型号BD13516S的Datasheet PDF文件第6页 
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BD13516S 替代型号

型号 品牌 替代类型 描述 数据表
BD13516STU ONSEMI

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1.5 A, 45V NPN Power Bipolar Junction Transistor

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