BD135G

更新时间： 2024-01-27 12:19:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管放大器 PC 局域网
页数	文件大小	规格书
4页	42K
描述
Plastic Medium Power Silicon NPN Transistor

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中文翻译

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技术参数
数据手册
替代型号

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BD135G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	2 weeks	风险等级：	1.99
最大集电极电流 (IC)：	1.5 A	配置：	Single
最小直流电流增益 (hFE)：	40	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.25 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
Base Number Matches：	1

BD135G 数据手册

BD135, BD137, BD139

Plastic Medium Power

Silicon NPN Transistor

This series of plastic, medium−power silicon NPN transistors are

designed for use as audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

http://onsemi.com

Features

• Pb−Free Packages are Available

1.5 A POWER TRANSISTORS

NPN SILICON

• DC Current Gain − h = 40 (Min) @ I = 0.15 Adc

• BD 135, 137, 139 are complementary with BD 136, 138, 140

45, 60, 80 V, 12.5 W

MAXIMUM RATINGS

TO−225AA

CASE 77

STYLE 1

Rating

Symbol Value

Unit

Collector−Emitter Voltage

BD135

BD137

BD139

Vdc

CEO

CBO

EBO

Collector−Base Voltage

BD135

BD137

BD139

100

Vdc

MARKING DIAGRAM

Emitter−Base Voltage

Collector Current

Base Current

5.0

1.5

0.5

Vdc

Adc

YWW

BD1xx

= 35, 37, 39

= Year

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.25

Watts

mW/°C

= Work Week

Total Device Dissipation @ T = 25°C

Derate above 25°C

12.5

100

Watts

mW/°C

ORDERING INFORMATION

Operating and Storage Junction

Temperature Range

T , T

–55 to

+150

°C

stg

†

Device

Package

Shipping

Maximum ratings are those values beyond which device damage can oc-

cur. Maximum ratings applied to the device are individual stress limit values

(not normal operating conditions) and are not valid simultaneously. If these

limits are exceeded, device functional operation is not implied, damage

may occur and reliability may be affected.

BD135

TO−225AA

500 Units/Box

BD135G

TO−225AA

(Pb−Free)

BD137

TO−225AA

500 Units/Box

THERMAL CHARACTERISTICS

BD137G

TO−225AA

(Pb−Free)

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

°C/W

BD139

TO−225AA

500 Units/Box

TO−225AA

(Pb−Free)

BD139G

Thermal Resistance,

Junction−to−Ambient

100

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

April, 2005 − Rev. 12

BD135/D

12 3 4

中文翻译

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BD135G 替代型号

型号	品牌	替代类型	描述	数据表
BD1356STU	ONSEMI	完全替代	1.5 A, 45V NPN Power Bipolar Junction Transistor
BD135	ONSEMI	类似代替	POWER TRANSISTORS NPN SILICON
BD135	STMICROELECTRONICS	功能相似	NPN SILICON TRANSISTORS

与BD135G相关器件

型号	品牌	获取价格	描述	数据表
BD135G_13	ONSEMI	获取价格	Plastic Medium-Power Silicon NPN Transistors
BD135T	SEMTECH	获取价格	NPN Silicon Epitaxial Power Transistor
BD135TG	ONSEMI	获取价格	Plastic Medium-Power Silicon NPN Transistors
BD136	FAIRCHILD	获取价格	Medium Power Linear and Switching Applications
BD136	COMSET	获取价格	SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
BD136	WINNERJOIN	获取价格	TRANSISTOR (PNP)
BD136	SAVANTIC	获取价格	Silicon PNP Power Transistors
BD136	KEC	获取价格	EPITAXIAL PLANAR PNP TRANSISTOR
BD136	ISC	获取价格	Silicon PNP Power Transistors
BD136	MOTOROLA	获取价格	Plastic Medium Power Silicon PNP Transistor

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