Datasheet > BD135

BD135

更新时间： 2025-07-30 08:51:11

品牌	Logo	应用领域
KEC		晶体晶体管放大器局域网
页数	文件大小	规格书
1页	68K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD135 数据手册

SEMICONDUCTOR

BD135

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

High Current. (Max. : 1.5A)

Low Voltage (Max. : 45V)

DC Current Gain : h_FE=40Min. @I_C=0.15A

Complementary to BD136.

DIM MILLIMETERS

8.3 MAX

5.8

0.7

Φ3.2 0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

3.5

11.0 0.3

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

2.9 MAX

1.0 MAX

1.9 MAX

0.75 0.15

15.5 0.5

2.3 0.1

0.65 0.15

1.6

1. EMITTER

2. COLLECTOR

3. BASE

3.4 MAX

1.5

I_B

Base Current

0.5

1.25

Ta=25

Tc=25

Collector Power

Dissipation

TO-126

P_C

T_j

Junction Temperature

150

-55 150

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=30V, I_E=0

MIN.

TYP.

MAX.

UNIT

0.1

I_EBO

V_(BR)CEO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE

V_EB=5V, I_C=0

Emitter Cut-off Current

I_C=30mA, I_B=0

Collector-Emitter Breakdown Voltage

I_C=5mA, V_CE=2V

I_C=150mA, V_CE=2V

I_C=500mA, V_CE=2V

I_C=500mA, I_B=50mA

V_CE=2V, I_C=500mA

V_CE=5V, I_C=50mA

DC Current Gain

250

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.5

1.0

f_T

Transition Frequency

190

MHz

2003. 6. 16

Revision No : 0

1/1

中文翻译

下载PDF

与BD135相关器件

型号	品牌	获取价格	描述	数据表
BD135 BD137 BD139	DGNJDZ	获取价格	Pcm(mW) : 1.25; Ic(mA) : 1.5; BVCBO(V) : 45/60/80; BVCEO(V) : 45/60/80; BVEBO(V) : 5; Min
BD135-10	NXP	获取价格	NPN power transistors
BD135-10	INFINEON	获取价格	NPN SILICON TRANSISTORS
BD135-10	STMICROELECTRONICS	获取价格	NPN SILICON TRANSISTORS
BD135-10-BP	MCC	获取价格	元器件封装:TO-126;
BD135-16	NXP	获取价格	NPN power transistors
BD135-16	INFINEON	获取价格	NPN SILICON TRANSISTORS
BD135-16	STMICROELECTRONICS	获取价格	Complementary low voltage transistor
BD135-16	MOTOROLA	获取价格	Transistor
BD135-16	CENTRAL	获取价格	Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti