Datasheet > BD135

BD135

更新时间： 2024-09-25 08:51:11

品牌	Logo	应用领域
KEC		晶体晶体管放大器局域网
页数	文件大小	规格书
1页	68K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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数据手册

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BD135 数据手册

SEMICONDUCTOR

BD135

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

High Current. (Max. : 1.5A)

Low Voltage (Max. : 45V)

DC Current Gain : h_FE=40Min. @I_C=0.15A

Complementary to BD136.

DIM MILLIMETERS

8.3 MAX

5.8

0.7

Φ3.2 0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

3.5

11.0 0.3

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

2.9 MAX

1.0 MAX

1.9 MAX

0.75 0.15

15.5 0.5

2.3 0.1

0.65 0.15

1.6

1. EMITTER

2. COLLECTOR

3. BASE

3.4 MAX

1.5

I_B

Base Current

0.5

1.25

Ta=25

Tc=25

Collector Power

Dissipation

TO-126

P_C

T_j

Junction Temperature

150

-55 150

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=30V, I_E=0

MIN.

TYP.

MAX.

UNIT

0.1

I_EBO

V_(BR)CEO

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE

V_EB=5V, I_C=0

Emitter Cut-off Current

I_C=30mA, I_B=0

Collector-Emitter Breakdown Voltage

I_C=5mA, V_CE=2V

I_C=150mA, V_CE=2V

I_C=500mA, V_CE=2V

I_C=500mA, I_B=50mA

V_CE=2V, I_C=500mA

V_CE=5V, I_C=50mA

DC Current Gain

250

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.5

1.0

f_T

Transition Frequency

190

MHz

2003. 6. 16

Revision No : 0

1/1

中文翻译

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