生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.21 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 参考标准: | CECC |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 125 MHz |
最大关闭时间(toff): | 800 ns | 最大开启时间(吨): | 150 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCY65EPSTZ | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 S | |
BCY65EVII | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-18 | |
BCY65EVIII | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-18 | |
BCY65Eザ | INFINEON |
获取价格 |
npn silicon planar transistors | |
BCY65Eシ | INFINEON |
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npn silicon planar transistors | |
BCY65Eジ | INFINEON |
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npn silicon planar transistors | |
BCY65-IX | NXP |
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TRANSISTOR 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, BIP General Purpose Smal | |
BCY65-VII | NXP |
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TRANSISTOR 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, BIP General Purpose Smal | |
BCY65-VIII | NXP |
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TRANSISTOR 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18, BIP General Purpose Smal | |
BCY66 | INFINEON |
获取价格 |
NPN Silicon Planar Transistor |