Datasheet > BCX70H

BCX70H

更新时间： 2024-11-23 22:39:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
2页	34K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

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数据手册
替代型号

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BCX70H 数据手册

BCX70H

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Storage Temperature

V_CBO

200

350

150

°C

V_CEO

V_EBO

I_C

P_C

T_STG

· Refer to KS3904 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Max

Unit

I_C=2.0mA, I_B=0

I_E=1.0mA, I_C=0

V_CE=32V, V_BE=0

V_EB=4V, I_C=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BV_CEO

BV_EBO

I_CES

I_EBO

DC Current Gain

V_CE=5V, I_C=10mA

V_CE=5V, I_C=2.0mA

V_CE=1V, I_C=50mA

I_C=10mA, I_B=0.25mA

I_C=50mA, I_B=1.25mA

I_C=10mA, I_B=0.25mA

I_C=50mA, I_B=1.25mA

I_C=2.0mA, V_CE=5V

I_C=10mA, V_CE=5V

h_FE

120

180

310

0.35

0.55

0.85

1.05

0.75

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

0.6

0.7

0.55

125

Base-Emitter On Voltage

Current Gain Bandwidth Product

V_BE(on)

f_T

MHz

V_CE=10V, I_E=0

f=1MHz

Output Capacitance

Noise Figure

C_OB

4.5

V_CE=5V, I_C=0.2mA

R_S=2KW, f=1KHz

I_C=10mA, I_B1=1.0mA

V_BB=3.6V, I_B2=1.0mA

R₁=R₂=5KW, R_L=990W

Turn On Time

Turn Off Time

T_ON

T_OFF

150

800

Rev. B

1999 Fairchild Semiconductor Corporation

中文翻译

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BCX70H 替代型号

型号	品牌	替代类型	描述	数据表
MMBT6429LT1G	ONSEMI	功能相似	Amplifier Transistors NPN Silicon

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