Datasheet > BCX70H_02

BCX70H_02

更新时间： 2024-11-24 04:09:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
General Purpose Transistor

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中文翻译

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数据手册

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BCX70H_02 数据手册

BCX70H

General Purpose Transistor

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

200

°C

Collector Power Dissipation

350

Storage Temperature

-55 ~ 150

STG

• Refer to KST3904 for graphs

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

I =2.0mA, I =0

CEO

EBO

I =1.0µA, I =0

=32V, V =0

CES

EBO

=4V, I =0

DC Current Gain

=5V, I =10µA

180

=5V, I =2.0mA

310

=1V, I =50mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I =10mA, I =0.25mA

0.35

0.55

I =50mA, I =1.25mA

I =10mA, I =0.25mA

0.6

0.7

0.85

1.05

I =50mA, I =1.25mA

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

=5V, I =2.0mA

0.55

125

0.75

MHz

=5V, I =10mA, f=100MHz

=10V, I =0, f=1MHz

4.5

Noise Figure

=5V, I =0.2mA

R =2KΩ, f=1KHz

Turn On Time

Turn Off Time

I =10mA, I =1.0mA

150

800

=3.6V, I =1.0mA

OFF

R =R =5KΩ, R =990Ω

Marking

Rev. B2, December 2002

12 3

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