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BCX70G PDF预览

BCX70G

更新时间: 2024-11-05 08:50:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管光电二极管
页数 文件大小 规格书
2页 324K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION:

BCX70G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.03其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BCX70G 数据手册

 浏览型号BCX70G的Datasheet PDF文件第2页 
BCX70 SERIES  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BCX70 Series  
types are NPN Silicon Transistors manufactured  
by the epitaxial planar process, epoxy molded in a  
surface mount package, designed for general purpose  
switching and amplifier applications.  
MARKING CODES: BCX70G: AG  
BCX70H: AH  
BCX70J: AJ  
BCX70K: AK  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
45  
45  
5.0  
100  
200  
CBO  
CEO  
EBO  
C
CM  
V
I
mA  
mA  
mA  
mW  
°C  
I
I
200  
350  
BM  
P
D
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
μA  
nA  
V
V
V
V
V
V
V
V
MHz  
pF  
pF  
I
I
I
V
V
V
=45V  
=45V, T =150°C  
=4.0V  
20  
20  
20  
CBO  
CBO  
EBO  
CBO  
CEO  
CB  
CB  
EB  
A
BV  
BV  
BV  
I =10μA  
45  
45  
5.0  
0.05  
0.10  
0.60  
0.70  
0.55  
100  
C
I =10mA  
C
I =1.0μA  
EBO  
E
V
V
V
V
V
I =10mA, I =250μA  
0.35  
0.55  
0.85  
1.05  
0.75  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(ON)  
C
B
B
B
B
I =50mA, I =1.25mA  
C
I =10mA, I =250μA  
C
I =50mA, I =1.25mA  
C
V
=5.0V, I =2.0mA  
CE  
CE  
CB  
EB  
CE  
C
f
C
C
V
V
V
V
=5.0V, I =10mA, f=100MHz  
250  
1.7  
11  
T
C
=10V, I =0, f=1.0MHz  
E
c
e
=0.5V, I =0, f=1.0MHz  
C
NF  
=5.0V, I =200μA, R =2.0kΩ,  
C S  
f=1.0kHz, BW=200Hz  
6.0  
dB  
BCX70G  
MIN MAX  
BCX70H  
BCX70J  
MIN MAX  
30  
BCX70K  
MIN MAX  
100  
MIN  
40  
MAX  
h
h
h
V
V
V
=5.0V, I =10μA  
C
FE  
FE  
FE  
CE  
CE  
CE  
=5.0V, I =2.0mA  
120  
50  
220  
180  
70  
310  
250  
90  
460  
380  
100  
630  
C
=1.0V, I =50mA  
C
R2 (20-November 2009)  

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