Datasheet > BCX70GLT1

BCX70GLT1

更新时间： 2024-09-15 22:07:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管光电二极管
页数	文件大小	规格书
6页	313K
描述
General Purpose Transistors(NPN Silicon)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BCX70GLT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.24
最大集电极电流 (IC)：	0.2 A	配置：	Single
最小直流电流增益 (hFE)：	60	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	125 MHz	Base Number Matches：	1

BCX70GLT1 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

NPN Silicon

BCX70GLT1

BCX70JLT1

BCX70KLT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Vdc

5.0

Vdc

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

BCX70GLT1 = AG ; BCX70JLT1 = AJ ; BCX70KLT1 = AK ;

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 2.0mAdc, I_E= 0 )

V _(BR)CEO

—

Vdc

Emitter–Base Breakdown Voltage

(I _E= 1.0 µAdc, I _C= 0)

V _(BR)EBO

5.0

Collector Cutoff Current

CES

—

nAdc

(V_CE= 32 Vdc, )

µAdc

(V_CE= 32 Vdc, T_A= 150°C )

Emitter Cutoff Current

—

nAdc

EBO

(V_EB= 4.0 Vdc, I _C= 0 )

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

M16–1/6

12 3 4 5 6

中文翻译

下载PDF

与BCX70GLT1相关器件

型号	品牌	获取价格	描述	数据表
BCX70GLT1/D	ETC	获取价格	General Purpose Transistors
BCX70GLT3	MOTOROLA	获取价格	200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BCX70GLT3	ONSEMI	获取价格	200mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN
BCX70GLX	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCX70GR	ZETEX	获取价格	SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR
BCX70GR	ALLEGRO	获取价格	Transistor
BCX70GR-AW	ZETEX	获取价格	SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR
BCX70GRLK	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCX70GRLO	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCX70GRLT	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB