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BCX70 PDF预览

BCX70

更新时间: 2024-11-04 22:39:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管光电二极管
页数 文件大小 规格书
2页 125K
描述
Surface mount Si-Epitaxial PlanarTransistors

BCX70 数据手册

 浏览型号BCX70的Datasheet PDF文件第2页 
BCX 70  
NPN  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
NPN  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
250 mW  
±0.1  
Plastic case  
SOT-23  
1.1  
2.9  
0.4  
Kunststoffgehäuse  
(TO-236)  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
2
1
Plastic material has UL classification 94V-0  
1.9  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BCX 70  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
B open  
E open  
C open  
VCE0  
VCB0  
VEB0  
Ptot  
45 V  
45 V  
5 V  
250 mW 1)  
100 mA  
IC  
Peak Collector current – Kollektor-Spitzenstrom ICM  
200 mA  
Peak Base current – Basis-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
IBM  
Tj  
TS  
200 mA  
150C  
- 65…+ 150C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Min.  
Typ.  
Max.  
Collector-Base cutoff current – Kollektorreststrom  
IE = 0, VCB = 45 V  
ICB0  
ICB0  
20 nA  
20 A  
IE = 0, VCB = 45 V, Tj = 150C  
Emitter-Base cutoff current – Emitterreststrom  
IC = 0, VEB = 4 V  
IEB0  
20 nA  
Collector saturation volt. – Kollektor-Sättigungsspg. 2)  
IC = 10 mA, IB = 0.25 mA  
IC = 50 mA, IB = 1.25 mA  
VCEsat  
VCEsat  
50 mV  
100 mV  
350 mV  
550 mV  
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
2) Tested with pulses tp = 300 s, duty cycle 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhältnis 2%  
56  
01.11.2003  

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