5秒后页面跳转
BCX70 PDF预览

BCX70

更新时间: 2024-11-06 04:09:11
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管光电二极管
页数 文件大小 规格书
2页 115K
描述
GENERAL PURPOSE TRANSISTOR

BCX70 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-23
包装说明:SOT-23, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.05
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
最大关闭时间(toff):800 ns最大开启时间(吨):150 ns
Base Number Matches:1

BCX70 数据手册

 浏览型号BCX70的Datasheet PDF文件第2页 
UTC BCX70  
NPN EPITAXIAL SILICON TRANSISTOR  
GENERAL PURPOSE TRANSISTOR  
MARKING  
2
1
CG  
3
SOT-23  
1: Emitter  
2: Base  
3: Collector  
*Pb-free plating product number: BCX70L  
ABSOLUTE MAXIMUM RATINGS  
(Ta = 25unless otherwise noted)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
45  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Power Dissipation  
Storage Temperature  
45  
5
V
V
mA  
mW  
200  
PC  
TSTG  
350  
-40 ~ +150  
ELECTRICAL CHARACTERISTICS  
(Ta = 25unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
45  
5
TYP MAX  
UNIT  
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCEO  
BVEBO  
ICES  
IC=2.0mA, IB=0  
IE=1.0µF, IC=0  
V
VCE=32V, VBE=0  
VEB=4V, IC=0  
VCE=5V, IC=10µA  
VCE=5V, IC=2.0mA  
VCE=1V, IC=50mA  
IC=10mA, IB=0.25mA  
IC=50mA, IB=1.25mA  
IC=10mA, IB=0.25mA  
IC=50mA, IB=1.25mA  
IC=2.0mA, VCE=5V  
20  
20  
nA  
nA  
Emitter Cut-off Current  
IEBO  
100  
380  
100  
DC Current Gain  
hFE  
630  
0.35  
0.55  
0.85  
1.05  
0.75  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE (sat)  
VBE (sat)  
VBE (on)  
fT  
Cob  
0.6  
0.7  
0.55  
125  
V
V
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
IC=10mA, VCE=5V, f=100MHz  
VCB=10V, IE=0, f=1MHz  
VCE=5V, IC=0.2mA, RS=2K  
f=1KHz  
MHz  
4.5  
6
PF  
Noise Figure  
Turn On Time  
Turn Off Time  
NF  
tON  
dB  
ns  
ns  
IC=10mA, IB1=1.0mA  
150  
800  
V
BB=3.6V, IB2=1.0mA, R1=R2=5KΩ  
tOFF  
RL=990Ω  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
1
www.unisonic.com.tw  
QW-R206-080,A  

与BCX70相关器件

型号 品牌 获取价格 描述 数据表
BCX70BK CENTRAL

获取价格

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,
BCX70BKLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,
BCX70G SAMSUNG

获取价格

NPN EPITAXIAL SILICON TRANSISTOR
BCX70G NEXPERIA

获取价格

NPN general purpose transistorsProduction
BCX70G ONSEMI

获取价格

NPN外延硅晶体管
BCX70G NXP

获取价格

NPN general purpose transistors
BCX70G INFINEON

获取价格

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
BCX70G VISHAY

获取价格

Small Signal Transistor (NPN)
BCX70G DIOTEC

获取价格

Surface mount Si-Epitaxial PlanarTransistors
BCX70G ZETEX

获取价格

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR