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BCX70 PDF预览

BCX70

更新时间: 2024-11-05 04:09:11
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管光电二极管
页数 文件大小 规格书
2页 115K
描述
GENERAL PURPOSE TRANSISTOR

BCX70 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-23
包装说明:SOT-23, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.05
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
最大关闭时间(toff):800 ns最大开启时间(吨):150 ns
Base Number Matches:1

BCX70 数据手册

 浏览型号BCX70的Datasheet PDF文件第2页 
UTC BCX70  
NPN EPITAXIAL SILICON TRANSISTOR  
GENERAL PURPOSE TRANSISTOR  
MARKING  
2
1
CG  
3
SOT-23  
1: Emitter  
2: Base  
3: Collector  
*Pb-free plating product number: BCX70L  
ABSOLUTE MAXIMUM RATINGS  
(Ta = 25unless otherwise noted)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
45  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Power Dissipation  
Storage Temperature  
45  
5
V
V
mA  
mW  
200  
PC  
TSTG  
350  
-40 ~ +150  
ELECTRICAL CHARACTERISTICS  
(Ta = 25unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
45  
5
TYP MAX  
UNIT  
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCEO  
BVEBO  
ICES  
IC=2.0mA, IB=0  
IE=1.0µF, IC=0  
V
VCE=32V, VBE=0  
VEB=4V, IC=0  
VCE=5V, IC=10µA  
VCE=5V, IC=2.0mA  
VCE=1V, IC=50mA  
IC=10mA, IB=0.25mA  
IC=50mA, IB=1.25mA  
IC=10mA, IB=0.25mA  
IC=50mA, IB=1.25mA  
IC=2.0mA, VCE=5V  
20  
20  
nA  
nA  
Emitter Cut-off Current  
IEBO  
100  
380  
100  
DC Current Gain  
hFE  
630  
0.35  
0.55  
0.85  
1.05  
0.75  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE (sat)  
VBE (sat)  
VBE (on)  
fT  
Cob  
0.6  
0.7  
0.55  
125  
V
V
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
IC=10mA, VCE=5V, f=100MHz  
VCB=10V, IE=0, f=1MHz  
VCE=5V, IC=0.2mA, RS=2K  
f=1KHz  
MHz  
4.5  
6
PF  
Noise Figure  
Turn On Time  
Turn Off Time  
NF  
tON  
dB  
ns  
ns  
IC=10mA, IB1=1.0mA  
150  
800  
V
BB=3.6V, IB2=1.0mA, R1=R2=5KΩ  
tOFF  
RL=990Ω  
UTC UNISONIC TECHNOLOGIES CO., LTD.  
1
www.unisonic.com.tw  
QW-R206-080,A  

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