Datasheet > BCX54TR13

BCX54TR13

更新时间： 2024-01-06 19:01:21

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	72K
描述
Transistor

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中文翻译

获取价格

数据手册

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BCX54TR13 数据手册

BCX54

BCX55

BCX56

Central

Semiconductor Corp.

SURFACE MOUNT

DESCRIPTION:

NPN SILICON TRANSISTOR

The CENTRAL SEMICONDUCTOR BCX54,

BCX55, and BCX56 types are NPN Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE

SOT-89 CASE

MAXIMUM RATINGS (T =25°C)

BCX54

BCX55

BCX56

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

100

CBO

CEO

EBO

5.0

1.0

1.5

100

200

1.2

T ,T

J stg

-65 to +150

104

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=30V

100

CBO

EBO

=30V, T =125°C

=5.0V

100

I =100µA (BCX54)

100

CBO

CEO

CE(SAT)

BE(ON)

I =100µA (BCX55)

I =100µA (BCX56)

I =10mA (BCX54)

I =10mA (BCX55)

I =10mA (BCX56)

I =500mA, I =50mA

0.5

1.0

=2.0V, I =500mA

=2.0V, I =5.0mA

=2.0V, I =150mA

250

160

250

=2.0V, I =150mA

(BCX54-10, BCX55-10, BCX56-10)

=2.0V, I =150mA

(BCX54-16, BCX55-16, BCX56-16)

100

=2.0V, I =500mA

=5.0V, I =10mA, f=100MHz

130

MHz

R3 (20-May 2004)

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与BCX54TR13相关器件

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BCX54TRL	YAGEO	获取价格	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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BCX55	SECOS	获取价格	Plastic-Encapsulate Transistors
BCX55	DIODES	获取价格	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
BCX55	MCC	获取价格	NPN Plastic-Encapsulate Transistors
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