Datasheet > BCX55

BCX55

更新时间： 2024-10-02 18:10:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	579K
描述
SOT-89

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中文翻译

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数据手册

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BCX55 数据手册

BCX55

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to BCX52

 High Current

 Low Voltage

 For Stages of Audio Amplifiers Application

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

0.1

Peak Base Current

IBM

0.2

Collector Power Dissipation

500

250

150

-55 ~+150

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

Storage Temperature

TSTG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=100uA，I_E=0

I_C=10mA，I_B=0

I =10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CEO

V(BR)EBO

I_CBO

，

0.1

uA V_CB=60V, I_E=0

Emitter cut-off current

V_EB=5V, I_C=0

I_EBO

h_FE1

h_FE2

h_FE3

V_CE=2V, I_C=5mA

DC current gain

V_CE=2V, I_C=150mA

V_CE=2V, I_C=0.5A

250

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE*

f_T

0.5

I_C=0.5A，I_B=50mA

V_CE=2V, I_C=0.5A

V_CE=5V,I_C=10mA,f=100

Transition frequency

130

MHz

CLASSIFICATION OF h_FE

Rank

100-250

Range

63-250

63-160

Marking

1 / 4

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