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BCX55 PDF预览

BCX55

更新时间: 2024-01-08 17:07:07
品牌 Logo 应用领域
WEITRON 晶体晶体管放大器
页数 文件大小 规格书
2页 320K
描述
NPN Plastic-Encapsulate Transistor

BCX55 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.08外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BCX55 数据手册

 浏览型号BCX55的Datasheet PDF文件第2页 
BCX54/BCX55/BCX56  
NPN Plastic-Encapsulate Transistor  
P b  
Lead(Pb)-Free  
1. BASE  
2. COLLECTOR  
1
2
3
FEATURES  
High current  
3. EMITTER  
SOT-89  
Low voltage  
Medium power general purposes  
Driver stages of audio amplifiers.  
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD  
BCX55:BE BCX55-10:BG BCX52-16:BM  
BCX56:BH BCX56-10:BK BCX56-16:BL  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
45  
Units  
VCBO  
Collector-Base Voltage  
BCX54  
BCX55  
BCX56  
60  
V
V
100  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
BCX54  
BCX55  
BCX56  
45  
60  
80  
5
VEBO  
IC  
V
A
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
1
PC  
500  
150  
-65-150  
mW  
TJ  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
45  
60  
100  
45  
60  
80  
5
TYP  
MAX  
UNIT  
V
IC=100μA,IE=0  
BCX54  
BCX55  
BC56  
Collector-base breakdown voltage  
V(BR)CBO  
IC=1mA,IB=0  
BCX54  
BCX55  
BCX56  
Collector-emitter breakdown voltage  
V(BR)CEO  
V
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)EBO IE=100μA,IC=0  
V
ICBO  
IEBO  
VCB=30V,IE=0  
0.1  
0.1  
μA  
μA  
VEB=5V,IC=0  
hFE(1)  
hFE(2)  
hFE(3)  
VCE=2V,IC=5mA  
VCE=2V,IC=150mA  
VCE=2V,IC=500mA  
40  
63  
25  
DC current gain  
250  
Collector-emitter saturation voltage  
VCE(sat)  
IC=-500mA,IB=-50mA  
0.5  
1
V
Base-emitter voltage  
Transition frequency  
VBE  
fT  
VCE=2V,IC=500mA  
V
VCE=5V,IC=10mA,f=100MHz  
130  
MHz  
WEITRON  
http://www.weitron.com.tw  
1/2  
25-Jun-08  

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