BCX51-16

更新时间： 2024-01-16 15:09:52

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管放大器
页数	文件大小	规格书
2页	222K
描述
PNP Plastic-Encapsulate Transistors

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中文翻译

获取价格

数据手册

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BCX51-16 数据手册

M C C

BCX51

BCX51-10

BCX51-16

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

PNP

ꢀꢁ Power Dissipation: P_CM=0.5W (T_amb=25R)

ꢀꢁ Collector Current: I_CM=-1.0A

ꢀꢁ Collector-Base Voltage: V_(BR)CBO=-45V

ꢀꢁ Marking Code: BCX51=AA, BCX51-10=AC, BCX51-16=AD

Plastic-Encapsulate

ꢀ

Transistors

ꢀ

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Maximum Ratings

ꢀ

Symbol

Rating

Value

-45

Unit

SOT-89

ꢀ

V_(BR)CBO

V_(BR)CEO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

ꢀ

-45

ꢀ

V_(BR)EBO

I_C

ꢀ

Emitter-Base Breakdown Voltage

Collector Current DC

-5

-1.0

ꢀ

P_C

T_J

T_STG

Collector Power Dissipation

Junction TemperatureRange

Storage Temperature

Range

0.5

-55 to +150

^OC

ꢀ

Electrical Characteristics @ 25ꢂC Unless Otherwise Specified

Max Units

ꢀ

Symbol

Parameter

Min

Typ

ꢀ

OFF CHARACTERISTICS

ꢀ

Collector-Base Breakdown Voltage

(I_C=-100uA, I_E=0)

V_(BR)CBO

-45

---

ꢀ

Collector-Emitter Breakdown Voltage

(I_C=-1mA, I_B=0)

ꢀ

V_(BR)CEO

V_(BR)EBO

-45

-5

ꢀ

Emitter-Base Breakdown Voltage

(I_E=10uA, I_C=0)

ꢀ

I_CBO

I_EBO

Collector Cutoff Current

(V_CB=-30V, I_E=0)

Emitter Cutoff Current

(V_EB=-5.0V, I_C=0)

ꢀ

---

-0.1

ꢀ

h_FE(1)

DC Current Gain

(V_CE=-2.0V, I_C=-150mA)

BCX51

ꢀ

100

---

250

160

250

---

ꢀ

BCX51-10

BCX51-16

ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(on)

f_T

DC Current Gain

(V_CE=2.0V, I_C=-5.0mA)

DC Current Gain

ꢀ

---

ꢈꢀꢇꢆ

ꢀꢁꢂꢃꢄꢅꢆ

ꢇꢀꢁꢆ ꢇꢉꢊꢆ

ꢇꢇꢆ

ꢁꢋꢌꢄꢅꢆ

ꢆ

ꢇꢀꢁꢆ

ꢒꢍꢐꢓꢆ

1.55

ꢇꢉꢊꢆ

ꢒꢍꢔꢕꢆ

ꢇꢇꢇꢇꢇ

ꢉꢆ

ꢖ

ꢍꢎꢏꢐꢆ

ꢍꢎꢑꢎꢆ

(V_CE=-2.0V, I_C=-500mA)

Collector-Emitter Saturation Voltage

(I_C=-500mA,I_B=-50mA)

Base-Emitter Voltage

(I_C=-500mA, V_CE=-2.0V)

Transition Frequency

(V_CE=-5V, I_C=-10mA,

f=100MHz)

.061

ꢇꢇꢇꢇꢇ

REF.

ꢆ

ꢂꢆ

ꢈꢆ

ꢄꢆ

ꢙꢆ

ꢝꢆ

ꢃꢆ

ꢞꢆ

ꢍꢎꢗꢒꢆ

ꢍꢕꢐꢎꢆ

ꢍꢕꢓꢘꢆ

ꢍꢎꢎꢑꢆ

ꢍꢕꢎꢐꢆ

ꢍꢕꢎꢗꢆ

ꢍꢕꢗꢗꢆ

ꢍꢎꢔꢗꢆ

ꢍꢕꢐꢓꢆ

ꢍꢎꢕꢕꢆ

ꢚꢚꢚꢚꢚꢆ

ꢍꢕꢎꢓꢆ

ꢍꢕꢘꢎꢆ

ꢍꢕꢎꢔꢆ

ꢍꢕꢔꢐꢆ

ꢐꢍꢓꢎꢆ

ꢕꢍꢑꢕꢆ

ꢘꢍꢐꢒꢆ

ꢐꢍꢕꢕꢆ

ꢕꢍꢐꢐꢆ

ꢕꢍꢐꢑꢆ

ꢎꢍꢒꢕꢆ

ꢒꢍ25ꢆ

ꢎꢍꢕꢕꢆ

ꢘꢍꢗꢒꢆ

ꢚꢚꢚꢚꢚꢆ

-0.5

-1

---

ꢆ

ꢌꢛꢜꢆ

---

ꢕꢍꢒꢑꢆ

ꢕꢍꢗꢐꢆ

ꢕꢍꢒꢎꢆ

ꢎꢍꢔꢕꢆ

ꢆ

---

MHz

ꢆ

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与BCX51-16相关器件

型号	品牌	获取价格	描述	数据表
BCX51-16,115	NXP	获取价格	45 V, 1 A PNP medium power transistor SOT-89 3-Pin
BCX51-16,135	NXP	获取价格	45 V, 1 A PNP medium power transistor SOT-89 3-Pin
BCX51-16/T3	NXP	获取价格	TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3
BCX51-16-AD	ZETEX	获取价格	SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX51-16E6327	INFINEON	获取价格	Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
BCX51-16E6327	ROCHESTER	获取价格	Si, POWER TRANSISTOR
BCX5116E6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor
BCX51-16E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BCX51-16-G	COMCHIP	获取价格	General Purpose Transistor
BCX5116H6327XTSA1	INFINEON	获取价格	Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3

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