是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.04 |
外壳连接: | COLLECTOR | 配置: | SINGLE |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX5116E6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor | |
BCX51-16E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon | |
BCX51-16-G | COMCHIP |
获取价格 |
General Purpose Transistor | |
BCX5116H6327XTSA1 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BCX5116H6433XTMA1 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BCX51-16LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BCX51-16-Q | NEXPERIA |
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45 V, 1 A PNP medium power transistorsProduction | |
BCX51-16T | NEXPERIA |
获取价格 |
45 V, 1 A PNP power bipolar transistorsProduction | |
BCX51-16T/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | SOT-89 | |
BCX5116TA | DIODES |
获取价格 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 |