Datasheet > BCW61C/E9

BCW61C/E9

更新时间： 2024-11-20 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	32K
描述
TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 100MA I(C) \| SOT-23

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数据手册

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BCW61C/E9 数据手册

BCW61 Series

New Product

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (PNP)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

0.031 (0.8)

Pin Configuration

1. Base 2. Emitter

3. Collector

0.035 (0.9)

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Mechanical Data

Dimensions in inches and (millimeters)

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Features

Marking

Code:

BCW61A = BA

BCW61B = BB

BCW61C = BC

BCW61D = BD

• PNP Silicon Epitaxial Planar Transistors

• Suited for low level, low noise, low

frequency applications in hybrid cicuits.

• Low Current, Low Voltage.

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• As complementary types, BCW60 Series NPN

transistors are recommended.

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

–V_CES

–V_CEO

–V_EBO

–I_C

Value

Unit

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Collector Current (DC)

100

°C

Peak Collector Current

–I_CM

–I_B

200

Base Current (DC)

Power Dissipation

P_tot

250

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Ambient Air

T_j

150

T_STG

R_θJA

–65 to +150

500⁽¹⁾

°C

°C/W

Note:

(1) Mounted on FR-4 printed-ciruit board.

Document Number 88171

09-May-02

www.vishay.com

12 3

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