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BCW30,235 PDF预览

BCW30,235

更新时间: 2024-02-13 08:25:31
品牌 Logo 应用领域
其他 - ETC 开关光电二极管晶体管
页数 文件大小 规格书
7页 309K
描述
TRANS PNP 32V 0.1A SOT23

BCW30,235 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-236包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.05最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):215JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.3 VBase Number Matches:1

BCW30,235 数据手册

 浏览型号BCW30,235的Datasheet PDF文件第1页浏览型号BCW30,235的Datasheet PDF文件第2页浏览型号BCW30,235的Datasheet PDF文件第3页浏览型号BCW30,235的Datasheet PDF文件第5页浏览型号BCW30,235的Datasheet PDF文件第6页浏览型号BCW30,235的Datasheet PDF文件第7页 
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BCW29; BCW30  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient  
500  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 32 V  
MIN. TYP. MAX. UNIT  
collector cut-off current  
100 nA  
10 μA  
IE = 0; VCB = 32 V; Tj = 100 °C  
IC = 0; VEB = 5 V  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
BCW29  
100 nA  
IC = 10 μA; VCE = 5 V  
90  
BCW30  
150  
DC current gain  
BCW29  
IC = 2 mA; VCE = 5 V  
120  
215  
260  
BCW30  
500  
VCEsat  
collector-emitter saturation  
voltage  
IC = 10 mA; IB = 0.5 mA  
IC = 50 mA; IB = 2.5 mA  
IC = 10 mA; IB = 0.5 mA  
IC = 50 mA; IB = 2.5 mA  
IC = 2 mA; VCE = 5 V  
80  
150  
720  
810  
300 mV  
mV  
mV  
mV  
VBEsat  
base-emitter saturation voltage  
VBE  
Cc  
fT  
base-emitter voltage  
collector capacitance  
transition frequency  
noise figure  
600  
750 mV  
IE = Ie = 0; VCB = 10 V; f = 1 MHz  
4.5  
pF  
IC = 10 mA; VCE = 5 V; f = 100 MHz 100  
MHz  
dB  
F
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;  
10  
f = 1 kHz; B = 200 Hz  
2004 Jan 13  
3

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