是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.63 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 215 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BCW30/T4 | NXP | TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI |
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BCW30_02 | FAIRCHILD | PNP General Purpose Amplifier |
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BCW30BK | CENTRAL | Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, |
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BCW30BKLEADFREE | CENTRAL | Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, |
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BCW30CSM | ETC | PNP |
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BCW30D87Z | FAIRCHILD | Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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