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BCR30GM-8L PDF预览

BCR30GM-8L

更新时间: 2024-01-31 19:18:26
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网三端双向交流开关栅极
页数 文件大小 规格书
5页 90K
描述
TRIAC, 400V V(DRM), 30A I(T)RMS

BCR30GM-8L 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-D3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84配置:SINGLE
最大直流栅极触发电流:50 mA最大直流栅极触发电压:2.5 V
快速连接描述:G-MT1-MT2螺丝端子的描述:0
JESD-30 代码:R-PUFM-D3最大漏电流:3 mA
通态非重复峰值电流:300 A元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:30 A
断态重复峰值电压:400 V子类别:TRIACs
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER触发设备类型:TRIAC
Base Number Matches:1

BCR30GM-8L 数据手册

 浏览型号BCR30GM-8L的Datasheet PDF文件第1页浏览型号BCR30GM-8L的Datasheet PDF文件第3页浏览型号BCR30GM-8L的Datasheet PDF文件第4页浏览型号BCR30GM-8L的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR30GM  
MEDIUM POWER USE  
INSULATED TYPE, GLASS PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=125°C, VDRM applied  
Min.  
Typ.  
Max.  
3.0  
1.6  
2.5  
2.5  
2.5  
50  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
VTM  
Tb=25°C, ITM=45A, Instantaneous measurement  
!
@
#
!
@
#
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
V
2  
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
V
mA  
mA  
mA  
V
2  
50  
Gate trigger current  
Tj=25°C, VD=6V, RL=6, RG=330Ω  
Tj=125°C, VD=1/2VDRM  
50  
0.2  
Gate non-trigger voltage  
Thermal resistance  
4  
1.6  
°C/W  
Rth (j-b)  
Junction to base  
Critical-rate of rise of off-state  
commutating voltage  
3  
V/µs  
(dv/dt)c  
2. Measurement using the gate trigger characteristics measurement circuit.  
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.  
4. The contact thermal resistance Rth (b-f) in case of greasing is 0.5°C/W.  
(dv/dt) c  
Voltage  
class  
VDRM  
(V)  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
Symbol  
Min.  
Unit  
R
SUPPLY  
1. Junction temperature  
VOLTAGE  
TIME  
8
400  
600  
Tj=125°C  
L
R
L
20  
20  
2. Rate of decay of on-state commutat-  
ing current  
(di/dt)c=–16A/ms  
(di/dt)c  
MAIN CURRENT  
V/µs  
TIME  
TIME  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
12  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
103  
500  
400  
300  
200  
100  
0
7
5
TC = 25°C  
3
2
102  
7
5
3
2
101  
7
5
3
2
100  
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Feb.1999  

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