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BCR146E6327 PDF预览

BCR146E6327

更新时间: 2024-11-25 14:37:39
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
6页 807K
描述
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

BCR146E6327 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.44其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.468
最大集电极电流 (IC):0.07 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BCR146E6327 数据手册

 浏览型号BCR146E6327的Datasheet PDF文件第2页浏览型号BCR146E6327的Datasheet PDF文件第3页浏览型号BCR146E6327的Datasheet PDF文件第4页浏览型号BCR146E6327的Datasheet PDF文件第5页浏览型号BCR146E6327的Datasheet PDF文件第6页 
BCR146  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R =47k, R =22k)  
1
2
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR146  
C
3
R1  
R2  
1
2
B
E
EHA07184  
Type  
BCR146  
Marking  
WLs  
Pin Configuration  
1=B 2=E 3=C -  
Package  
SOT23  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
50  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
Input reverse voltage  
Collector current  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
80  
10  
70  
mA  
I
C
200  
mW  
Total power dissipation-  
P
tot  
T 102°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
240  
Unit  
K/W  
1)  
R
thJS  
2011-08-29  
1

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