Datasheet > BCR12FM-14LBA8BB0

BCR12FM-14LBA8BB0

更新时间： 2022-04-20 17:22:10

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	133K
描述
700V - 12A - Triac Medium Power Use

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BCR12FM-14LBA8BB0 数据手册

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Preliminary Datasheet

BCR12FM-14LB

700V - 12A - Triac

R07DS1064EJ0100

Rev.1.00

Apr 10, 2013

Medium Power Use

Features



I_{T (RMS)}: 12 A

_DRM: 800 V (Tj =125 °C)

Tj: 150 °C

_FGTI, I_RGTI, I_{RGT III}:30 mA



Insulated Type

Planar Passivation Type

_iso: 2000V

Outline

RENESAS Package code: PRSS0003AG-A

(Package name: TO-220FP)

1. T Terminal

2. T Terminal

3. Gate Terminal

Applications

Washing machine, inversion operation of capacitor motor, and other general controlling devices

Maximum Ratings

Voltage class

Parameter

Symbol

V_DRM

Unit

Conditions

Repetitive peak off-state voltage^Note1

800

700

840

Tj=125C

Tj=150C

Non-repetitive peak off-state voltage^Note1

V_DSM

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

Commercial frequency, sine full wave

360conduction, Tc = 102C

50Hz sinewave 1 full cycle, peak value,

non-repetitive

Value corresponding to 1 cycle of half

wave 50Hz, surge on-state current

Surge on-state current

I²t for fusion

120

A²s

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.5

Peak gate current

Junction Temperature

Storage temperature

Mass

Tstg

—

–40 to +150

1.9

C

Typical value

Ta = 25C, AC 1 minute,

T₁ T₂ G terminal to case

Isolation voltage ^Note5

V_iso

2000

R07DS1064EJ0100 Rev.1.00

Apr 10, 2013

Page 1 of 7

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