Datasheet > BCR12FM-14LBA8BB0

BCR12FM-14LBA8BB0

更新时间： 2022-04-20 17:22:10

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	133K
描述
700V - 12A - Triac Medium Power Use

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BCR12FM-14LBA8BB0 数据手册

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BCR12FM-14LB

Preliminary

Gate Trigger Current vs.

Gate Current Pulse Width

Commutation Characteristics (Tj=150°C)

10²

10³

Time

Main Voltage

(dv/dt)c

Main Current

Typical Example

FGT I

(di/dt)c

Time

RGT I

RGT III

III Quadrant

10¹

10²

Typical Example

Tj = 150°C

I Quadrant

I = 4A

τ = 500μs

Minimum

Characteristics

Value

V = 200V

f = 3Hz

10⁰

10¹

10⁰

3 4 5 7 10¹

3 4 5 7 10²

10⁰2 3 5 7 10¹2 3 5 7 10²2 3 5 7 10³

Rate of Decay of On-State

Commutating Current (A/ms)

Gate Current Pulse Width (μs)

Gate Trigger Characteristics Test Circuits

Recommended Circuit Values Around The Triac

6Ω

Load

C₁

R₁

C₀R₀

330Ω

C = 0.1 to 0.47μF C = 0.1μF

R = 100Ω

R = 47 to 100Ω

Test Procedure II

Test Procedure I

6Ω

330Ω

Test Procedure III

R07DS1064EJ0100 Rev.1.00

Apr 10, 2013

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