BCR12FM-14LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
VTM
—
—
1.6
Tc = 25C, ITM = 20 A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
30
IRGT
30
Gate non-trigger voltage
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
V
Thermal resistance
Rth (j-c)
3.3
—
C/W
V/s
V/s
Critical-rate of rise of off-state
commutation voltageNote4
Notes: 1. Gate open.
(dv/dt)c
—
Tj = 150C
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C/150C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = –6.0 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS1064EJ0100 Rev.1.00
Apr 10, 2013
Page 2 of 7