Datasheet > BCR112_07

BCR112_07

更新时间： 2022-10-15 10:04:32

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
11页	120K
描述
NPN Silicon Digital Transistor

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数据手册

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BCR112_07 数据手册

BCR112...

DC current gain h = ƒ(I )

Collector-emitter saturation voltage

= 5 V (common emitter configuration)

= ƒ(I ), I /I = 20

CEsat C C B

10 ³

0.5

0.4

0.35

0.3

10 ²

10 ¹

-40 °C

-25 °C

25 °C

85 °C

125 °C

0.25

0.2

-40 °C

-25 °C

25 °C

0.15

0.1

10 ⁰

85 °C

125 °C

0.05

10 ^-1

10 ^-4

10 ^-3

10 ^-2

10 ^-1

10 ^-3

10 ^-2

10 ^-1

Input on Voltage Vi

= ƒ(I )

Input off voltage V

= ƒ(I )

i(off) C

(on)

= 0.3V (common emitter configuration)

= 5V (common emitter configuration)

10 ¹

-40 °C

-25 °C

-40 °C

-25 °C

25 °C

85 °C

125 °C

25 °C

85 °C

125 °C

10 ⁰

10 ^-1

10 ^-5

10 ^-1

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ^-1

10 ^-4

10 ^-3

10 ^-2

10 ^-1

2007-09-17

1 2 345 6 7...11

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