Datasheet > BCR10PM-14LJB00

BCR10PM-14LJB00

更新时间： 2022-04-20 17:22:07

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	112K
描述
700V - 10A - Triac Medium Power Use

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数据手册

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BCR10PM-14LJB00 数据手册

BCR10PM-14LJ

Preliminary

Performance Curves

Maximum On-State Characteristics

Rated Surge On-State Current

10²

100

Tj = 150°C

10¹

Tj = 25°C

10⁰

10¹

10²

On-State Voltage (V)

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

Gate Characteristics (I, II and III)

10³

10²

10¹

Typical Example

= 10V

= 5W

10¹

0.5W

, I

RGT I RGT III

G(AV)

= 2A

= 1.5V

10⁰

FGT I

10⁻¹

= 0.1V

I , I

FGT I RGT III

RGT I

10¹

10²

10³

10⁴

–40

120

160

Gate Current (mA)

Junction Temperature (°C)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

10²

10³

10⁴

10³

10²

10¹

Typical Example

10⁻¹

10⁰

10¹

10²

–40

120

160

Junction Temperature (°C)

Conduction Time (Cycles at 60Hz)

R07DS0980EJ0100 Rev.1.00

Dec 03, 2012

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