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BCR08PNH6433XTMA1 PDF预览

BCR08PNH6433XTMA1

更新时间: 2024-01-11 03:37:58
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
7页 528K
描述
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SOT-363, 6 PIN

BCR08PNH6433XTMA1 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
Factory Lead Time:6 weeks风险等级:5.75
其他特性:BUILT-IN BIAS RESISTOR RATIO 1最大集电极电流 (IC):0.07 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BCR08PNH6433XTMA1 数据手册

 浏览型号BCR08PNH6433XTMA1的Datasheet PDF文件第1页浏览型号BCR08PNH6433XTMA1的Datasheet PDF文件第3页浏览型号BCR08PNH6433XTMA1的Datasheet PDF文件第4页浏览型号BCR08PNH6433XTMA1的Datasheet PDF文件第5页浏览型号BCR08PNH6433XTMA1的Datasheet PDF文件第6页浏览型号BCR08PNH6433XTMA1的Datasheet PDF文件第7页 
BCR08PN  
Electrical Characteristics at T =25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
50  
50  
-
DC Characteristics for NPN and PNP Types  
Collector-emitter breakdown voltage  
-
-
-
-
-
-
-
-
V
V
V
(BR)CEO  
I = 100 µA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
(BR)CBO  
C
E
Collector cutoff current  
= 40 V, I = 0  
I
100 nA  
164 µA  
CBO  
V
CB  
E
-
Emitter cutoff current  
= 5 V, I = 0  
I
EBO  
V
EB  
C
70  
-
-
DC current gain 1)  
I = 5 mA, V = 5 V  
h
-
FE  
C
CE  
0.3  
V
Collector-emitter saturation voltage1)  
I = 10 mA, I = 0.5 mA  
V
CEsat  
i(off)  
C
B
Input off voltage  
I = 100 µA, V = 5 V  
V
V
0.4  
-
0.8  
C
CE  
Input on Voltage  
I = 2 mA, V = 0.3 V  
0.5  
1.5  
-
1.1  
2.9  
i(on)  
C
CE  
2.2  
Input resistor  
Resistor ratio  
R
kΩ  
-
1
0.042 0.047 0.052  
R /R  
1
2
AC Characteristics for NPN and PNP Types  
Transition frequency  
-
-
170  
2
-
-
MHz  
pF  
f
T
I = 10 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
1) Pulse test: t < 300µs; D < 2%  
2011-07-28  
2

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