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BCR08PNQ62702C2486 PDF预览

BCR08PNQ62702C2486

更新时间: 2022-01-18 22:05:00
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
5页 67K
描述
TRANSISTOR DIGITAL SOT363

BCR08PNQ62702C2486 数据手册

 浏览型号BCR08PNQ62702C2486的Datasheet PDF文件第2页浏览型号BCR08PNQ62702C2486的Datasheet PDF文件第3页浏览型号BCR08PNQ62702C2486的Datasheet PDF文件第4页浏览型号BCR08PNQ62702C2486的Datasheet PDF文件第5页 
BCR 08PN  
NPN/PNP Silicon Digital Tansistor Array  
• Switching circuit, inverter, interface circuit,  
drive circuit  
• Two (galvanic) internal isolated NPN/PNP  
Transistor in one package  
• Built in bias resistor (R =2.2k , R =47k )  
1
2
Tape loading orientation  
Type  
Marking Ordering Code Pin Configuration  
Package  
BCR 08PN WFs  
Q62702-C2486 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
CEO  
V
CBO  
V
EBO  
V
i(on)  
50  
V
50  
5
10  
DC collector current  
I
100  
mA  
mW  
°C  
C
Total power dissipation, T = 115°C  
P
250  
S
tot  
j
Junction temperature  
Storage temperature  
T
T
150  
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
275  
K/W  
thJA  
Junction - soldering point  
140  
thJS  
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu  
Semiconductor Group  
1
Nov-26-1996  

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