Datasheet > BCR08PNQ62702C2486

BCR08PNQ62702C2486

更新时间： 2022-01-18 22:05:00

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
5页	67K
描述
TRANSISTOR DIGITAL SOT363

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BCR08PNQ62702C2486 数据手册

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BCR 08PN

NPN TYPE

DC Current Gain h = f (I )

Collector-Emitter Saturation Voltage

V = f(I ), h = 20

CEsat

= 5V (common emitter configuration)

10 ²

10 ³

h_FE

I_C

10 ²

10 ¹

10 ⁰

10 ¹

10 ⁰

10 ^-1

10 ⁰

10 ¹

I_C

0.0

0.1

0.2

0.3

0.5

V_CEsat

Input on Voltage V

= f(I )

Input off voltage V = f(I )

i(off) C

i(on)

= 0.3V (common emitter configuration)

= 5V (common emitter configuration)

10 ¹

10 ²

I_C

10 ⁰

10 ^-1

10 ^-2

10 ^-3

10 ¹

10 ⁰

10 ^-1

10 ⁰

10 ¹

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V_i(off)

1.0

V_i(on)

Semiconductor Group

Nov-26-1996

1 234 5

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