是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 2.37 |
其他特性: | HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 63 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP51-10TA | DIODES |
获取价格 |
1A, 45V, PNP, Si, POWER TRANSISTOR | |
BCP51-10-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP51-10-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP51-10TC | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BCP51-10-TP | MCC |
获取价格 |
Power Bipolar Transistor, | |
BCP51-10-TP-HF | MCC |
获取价格 |
Power Bipolar Transistor, | |
BCP5116 | DIODES |
获取价格 |
PNP, 45V, 1A, SOT223 | |
BCP51-16 | NXP |
获取价格 |
PNP medium power transistors | |
BCP51-16 | INFINEON |
获取价格 |
PNP Silicon AF Transistors (For AF driver and output stages High collector current) | |
BCP51-16 | NEXPERIA |
获取价格 |
45 V, 1 A PNP medium power transistorProduction |