生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.18 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 420 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.65 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC858CRTIN/LEAD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, |
![]() |
BC858CS | BL Galaxy Electrical |
获取价格 |
-30V,-0.1A,General Purpose Dual PNP Bipolar Transistor |
![]() |
BC858CS62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
![]() |
BC858CT | YANGJIE |
获取价格 |
SOT-523 |
![]() |
BC858CT | BL Galaxy Electrical |
获取价格 |
30V,0.1A,General Purpose PNP Bipolar Transistor |
![]() |
BC858CT/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-236AA |
![]() |
BC858CT116 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL |
![]() |
BC858CT117 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL |
![]() |
BC858CT216 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL |
![]() |
BC858CTA | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
![]() |