Datasheet > BC857B-MR

BC857B-MR

更新时间： 2024-02-28 17:33:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管过程控制系统 PCS
页数	文件大小	规格书
3页	71K
描述
TRANSISTOR BC857B MINIREEL 500PCS

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中文翻译

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数据手册

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BC857B-MR 数据手册

PNP EPITAXIAL

BC856/857/858/859/860

SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATIONS

· Suitable for automatic insertion in thick and thin-film circuits

· LOW NOISE: BC859, BC860

SOT-23

· Complement to BC846 ... BC850

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

V_CBO

Rating

Unit

Collector-Base Voltage

: BC856

: BC857/860

: BC858/859

Collector-Emitter Voltage

-80

-50

-30

V_CEO

: BC856

: BC857/860

: BC858/859

-65

-45

-30

Emitter-Base Voltage

V_EBO

I_C

P_C

T_J

T_STG

-5

-100

310

150

-65 ~ 150

Collector Current (DC)

Collector Dissipation

Junction Temperature

Storage Temperature

°C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_CBO

h_FE

V_CE(sat)

V_CB= -30V, I_E=0

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

-15

800

-300

-650

V_CE= -5V, I_C= -2mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5mA

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5mA

V_CE= -5V, I_C= -2mA

V_CE= -5V, I_C= -10mA

f=100MHz

V_CB= -10V, f=1MHz

V_CE= -5V, I_C= -200mA

f=1KHz, R_G=2KW

V_CE= -5V, I_C= -200mA

R_G=2KW

110

MHz

-90

-250

-700

-900

-660

V_BE(sat)

V_BE(on)

f_T

Collector-Base Saturation Voltage

Base-Emitter On Voltage

-750

-800

-600

Current Gain Bandwidth Product

Collector-Base Capacitance

150

C_CBO

Noise Figure

: BC856/857/858

: BC859/860

: BC859

: BC860

1.2

f=30~15000Hz

h_FECLASSIFICATION

Classification

h_FE

110-220

200-450

420-800

MARKING CODE

TYPE 856A 856B 856C 857A 857B 857C 858A 858B 858C 859A 859B 859C 860A 860B 860C

MARK 9AA

9AB

9AC

9BA

9BB

9BC

9CA

9CB

9CC

9DA

9DB 9DC

9EA

9EB

9EC

Rev. B

1999 Fairchild Semiconductor Corporation

12 3

中文翻译

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