Datasheet > BC857BRLT1

BC857BRLT1

更新时间： 2024-11-28 22:22:35

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	152K
描述
General Purpose Transistors(PNP Silicon)

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中文翻译

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数据手册

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BC857BRLT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

BC857BRLT1

is LRC prefered Device

COLLECTOR

BASE

EMITTER

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

–50

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Collector power dissipation

Junction temperature

Storage temperature

–60

–6.0

–150

0.2

mAdc

P _C

T _j

150

°C

T _stg

-55

+150

°C

DEVICE MARKING

BC857BRLT1 =G3F

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I_C= –1 mA)

V _(BR)CEO

– 50

—

Emitter–Base Breakdown Voltage

(I_E= – 50 µA)

V _(BR)EBO

V _(BR)CBO

I _CBO

– 6

– 60

—

Collector–Base Breakdown Voltage

(I_C= – 50 µA)

Collector Cutoff Current

(V_CB= – 60 V)

– 0.1

µA

Emitter cutoff current

I _EBO

—

(V_EB= – 6 V)

Collector-emitter saturation voltage

(I_C/ I_B= – 50 mA / – 5m A)

DC current transfer ratio

(V _CE= – 6 V, I _C= –1mA)

Transition frequency

V _CE(sat)

h _FE

—

-0.5

560

120

––

f _T

—

140

4.0

––

MHz

(V _CE= – 12 V, I _E= 2mA, f=30MHz )

Output capacitance

C _ob

5.0

(V _CB= – 12 V, I _E= 0A, f =1MHz )

h _FEvalues are classified as follows:

hFE

120~270

180~390

270~560

M35–1/3

12 3

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