Datasheet > BC857BRLT1

BC857BRLT1

更新时间： 2024-09-12 22:22:35

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	152K
描述
General Purpose Transistors(PNP Silicon)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC857BRLT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

BC857BRLT1

is LRC prefered Device

COLLECTOR

BASE

EMITTER

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

–50

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Collector power dissipation

Junction temperature

Storage temperature

–60

–6.0

–150

0.2

mAdc

P _C

T _j

150

°C

T _stg

-55

+150

°C

DEVICE MARKING

BC857BRLT1 =G3F

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(I_C= –1 mA)

V _(BR)CEO

– 50

—

Emitter–Base Breakdown Voltage

(I_E= – 50 µA)

V _(BR)EBO

V _(BR)CBO

I _CBO

– 6

– 60

—

Collector–Base Breakdown Voltage

(I_C= – 50 µA)

Collector Cutoff Current

(V_CB= – 60 V)

– 0.1

µA

Emitter cutoff current

I _EBO

—

(V_EB= – 6 V)

Collector-emitter saturation voltage

(I_C/ I_B= – 50 mA / – 5m A)

DC current transfer ratio

(V _CE= – 6 V, I _C= –1mA)

Transition frequency

V _CE(sat)

h _FE

—

-0.5

560

120

––

f _T

—

140

4.0

––

MHz

(V _CE= – 12 V, I _E= 2mA, f=30MHz )

Output capacitance

C _ob

5.0

(V _CB= – 12 V, I _E= 0A, f =1MHz )

h _FEvalues are classified as follows:

hFE

120~270

180~390

270~560

M35–1/3

12 3

中文翻译

下载PDF

与BC857BRLT1相关器件

型号	品牌	获取价格	描述	数据表
BC857BR-TAPE-13	NXP	获取价格	TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857BR-TAPE-7	NXP	获取价格	TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BC857BRTR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
BC857BRTR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
BC857BRTRPBFREE	CENTRAL	获取价格	Transistor,
BC857BRTRTIN/LEAD	CENTRAL	获取价格	Transistor
BC857BS	NXP	获取价格	PNP general purpose double transistor
BC857BS	PANJIT	获取价格	PNP GENERAL PURPOSE DUALTRANSISTORS
BC857BS	NEXPERIA	获取价格	PNP general purpose double transistorProduction
BC857BS	DIODES	获取价格	DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR