Datasheet > BC857B,215

BC857B,215

更新时间： 2025-08-10 19:11:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	201K
描述
CE结击穿电压Vceo(V):45V;最大集电极电流Ic(mA):100mA;类型:PNP;CE结饱和压降Vce(sat):650mV @ 5mA, 100mA;最大耗散功率Pd(W):250mW;最大工作温度(℃):150°C ;变换频率ft(MHz):100MHz;元器件封装:SOT-23-3;

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BC857B,215 数据手册

BC856; BC857; BC858

65 V, 100 mA PNP general-purpose transistors

Rev. 7 — 16 April 2018

Product data sheet

1 Product profile

1.1 General description

PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device

(SMD) plastic package.

Table 1.ꢀProduct overview

Type number

Package

Nexperia

SOT23

NPN complement

JEDEC

BC856

TO-236AB

BC846

BC856A

BC856B

BC857

BC846A

BC846B

BC847

BC857A

BC857B

BC857C

BC858B

BC847A

BC847B

BC847C

BC848B

1.2 Features and benefits

• Low current (max. 100 mA)

• Low voltage (max. 65 V)

• AEC-Q101 qualified

1.3 Applications

• General-purpose switching and amplification

12 3 4 5 6 7...14

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