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BC856W-T PDF预览

BC856W-T

更新时间: 2024-01-21 13:35:16
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管光电二极管
页数 文件大小 规格书
8页 52K
描述
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

BC856W-T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.04Is Samacsys:N
最大集电极电流 (IC):0.1 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):125JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.65 VBase Number Matches:1

BC856W-T 数据手册

 浏览型号BC856W-T的Datasheet PDF文件第1页浏览型号BC856W-T的Datasheet PDF文件第3页浏览型号BC856W-T的Datasheet PDF文件第4页浏览型号BC856W-T的Datasheet PDF文件第5页浏览型号BC856W-T的Datasheet PDF文件第6页浏览型号BC856W-T的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PNP general purpose transistors  
BC856; BC857  
FEATURES  
PINNING  
PIN  
Low current (max. 100 mA)  
Low voltage (max. 65 V).  
DESCRIPTION  
1
2
3
base  
emitter  
collector  
APPLICATIONS  
General purpose switching and amplification.  
DESCRIPTION  
PNP transistor in a SOT23 plastic package.  
NPN complements: BC846 and BC847.  
handbook, halfpage  
3
3
2
MARKING  
1
TYPE  
NUMBER  
MARKING  
CODE(1)  
TYPE  
NUMBER  
MARKING  
CODE(1)  
BC856  
3D  
3A  
3B  
3H  
BC857A  
BC857B  
BC857C  
3E  
3F  
3G  
1
2
BC856A  
BC856B  
BC857  
Top view  
MAM256  
Note  
1.  
= p : Made in Hong Kong.  
= t : Made in Malaysia.  
Fig.1 Simplified outline (SOT23) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
BC856  
80  
V
V
BC857  
50  
VCEO  
collector-emitter voltage  
BC856  
open base  
65  
V
V
V
BC857  
45  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
5  
100  
200  
200  
250  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Note  
1. Mounted on an FR4 printed-circuit board.  
1999 Apr 12  
2

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