Datasheet > BC848S

BC848S

更新时间： 2023-12-06 20:03:58

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	495K
描述
SOT-363

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中文翻译

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数据手册

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BC848S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

BC848S ^{DUAL TRANSISTOR (NPN+NPN)}

SOT-363

APPLICATION



This device is designed for general purpose amplifier applications

Marking : 2C

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

VCBO

V^CEO

V^EBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Power Dissipation

100

P^D

200

R^θJA

T_J,Tstg

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

625

℃/W

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

ICBO

Test conditions

I_C=10µA,I_E=0

I_C=1mA,I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=10µA,I_C=0

V_CB=30V,I_E=0

V_CE=30V,I_E=0

VEB =5V,IC=0

100

800

0.25

0.6

Collector cut-off current

I^CEO

Emitter cut-off current

I_EBO

DC current gain*

h_FE*

V_CE=5V,I_C=2mA

420

V^CE(sat)(1)* I_C=10mA,I_B=0.5mA

V^CE(sat)(2)* I_C=100mA,I_B=5mA

I_C=10mA,I_B=0.5mA

Collector-emitter saturation voltage

Base-emitter voltage

0.7

0.9

V_BE(sat)

I_C=100mA,I_B=5mA

V_CE=5V,I_C=2mA

0.58

100

0.7

Base-emitter voltage

V^BE(on)*

V_CE=5V,I_C=10mA

0.77

Transition frequency

V_CE=5V,I_C=10mA ,f=100MHz

V_CB=10V,I_E=0,f=1MHz

MHz

f_T

Collector output capacitance

C^ob

4.5

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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