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BC848W PDF预览

BC848W

更新时间: 2024-01-23 00:21:33
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 424K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC848W 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.56
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC848W 数据手册

 浏览型号BC848W的Datasheet PDF文件第2页浏览型号BC848W的Datasheet PDF文件第3页 
M C C  
BC846W  
BC847W  
BC848W  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
Micro Commercial Components  
Features  
NPN  
General Purpose  
Transistors  
Low current (max. 100mA)  
Low voltage (max. 65V)  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
Operating temperature : -65to +150℃  
Storage temperature : -65to +150℃  
Thermal resistance from junction to ambient*: 625K/W  
SOT-323  
A
D
C
Electrical Characteristics @ 25Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
C
B
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage  
(IC=-10mAdc, IB=0)  
BC846W  
Vdc  
E
B
F
E
---  
---  
---  
80  
50  
30  
BC847W  
BC848W  
Collector-Base Breakdown Voltage  
(IC=-100µAdc, IE=0)  
BC846W  
Vdc  
Vdc  
H
G
J
---  
---  
---  
65  
45  
30  
BC847W  
BC848W  
K
DIMENSIONS  
INCHES  
Collector-Emitter Breakdown Voltage  
(IE=-10µAdc, IC=0)  
BC846W, BC847W  
BC848W  
Collector Current (DC)  
Peak Collector Current  
Peak Base Current  
MM  
---  
---  
---  
---  
---  
6
5
100  
200  
200  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
IC  
ICM  
IBM  
mAdc  
mAdc  
µAdc  
.026 Nominal  
0.65Nominal  
1.20  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
F
.012  
.000  
.035  
.004  
.012  
.30  
.000  
.90  
.100  
.30  
* Transistor mounted on an FR4 printed-circuit board  
G
H
J
.100  
1.00  
.250  
.40  
K
Suggested Solder  
Pad Layout  
0.70  
0.90  
1.90  
0.65  
0.65  
www.mccsemi.com  
Revision: 2  
2006/05/26  
1 of 3  

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