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BC848C-7 PDF预览

BC848C-7

更新时间: 2024-02-12 03:04:40
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 61K
描述
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC848C-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.69其他特性:HIGH RELIABILITY
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

BC848C-7 数据手册

 浏览型号BC848C-7的Datasheet PDF文件第2页浏览型号BC848C-7的Datasheet PDF文件第3页 
BC846A - BC848C  
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
·
·
Ideally Suited for Automatic Insertion  
Complementary PNP Types Available  
(BC856-BC858)  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
A
·
For Switching and AF Amplifier Applications  
C
B
B
C
Mechanical Data  
C
TOP VIEW  
B
E
D
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Pin Connections: See Diagram  
Marking Codes (See Table Below & Diagram  
on Page 3)  
Ordering & Date Code Information: See Page 3  
Approx. Weight: 0.008 grams  
D
G
E
E
H
G
H
·
·
K
M
J
J
L
K
·
·
L
M
·
·
a
All Dimensions in mm  
Marking Code (Note 2)  
Type  
Marking  
1A, K1Q  
Type  
Marking  
1G, K1M  
BC846A  
BC846B  
BC847A  
BC847B  
BC847C  
BC848A  
BC848B  
BC848C  
1B, K1R  
1J, K1J, K1E, K1Q  
1K, K1K, K1F, K1R  
1L, K1L, K1M  
1E, K1E, K1Q  
1F, K1F, K1R  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
80  
50  
30  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
BC846  
BC847  
BC848  
VCBO  
V
65  
45  
30  
BC846  
BC847  
BC848  
VCEO  
V
V
6.0  
5.0  
BC846, BC847  
BC848  
VEBO  
IC  
ICM  
Collector Current  
100  
200  
mA  
mA  
Peak Collector Current  
Peak Emitter Current  
Power Dissipation (Note 1)  
IEM  
200  
mA  
Pd  
300  
mW  
°C/W  
°C  
RqJA  
Tj, TSTG  
417  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf  
2. Current gain subgroup “C” is not available for BC846.  
DS11108 Rev. 14 - 2  
1 of 3  
BC846A-BC848C  

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