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BC847DS

更新时间: 2024-11-03 11:12:07
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 1938K
描述
45 V, 100 mA NPN/NPN general-purpose transistorProduction

BC847DS 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55JESD-609代码:e3
湿度敏感等级:1端子面层:Tin (Sn)
Base Number Matches:1

BC847DS 数据手册

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BC847DS  
45 V, 100 mA NPN/NPN general-purpose transistor  
Rev. 01 — 25 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted  
Device (SMD) plastic package.  
1.2 Features  
I Low collector capacitance  
I Low collector-emitter saturation voltage  
I Closely matched current gain  
I Reduces number of components and board space  
I No mutual interference between the transistors  
I AEC-Q101 qualified  
1.3 Applications  
I General-purpose switching and amplification  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
45  
V
-
-
100  
450  
mA  
hFE  
DC current gain  
VCE = 5 V; IC = 2 mA  
200  
300  

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