Datasheet > BC847DW-AH

BC847DW-AH

更新时间： 2024-11-03 14:52:15

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	240K
描述
小信号晶体管

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数据手册

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BC847DW-AH 数据手册

BC846DW…BC848DW-AH

Dual NPN Silicon Epitaxial Planar Transistors

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF),

RoHS compliant

TR2

TR1

Applications

TR1: 1. Emitter 2. Base 6. Collector

TR2: 3. Collector 4. Emitter 5. Base

SOT-363 Plastic Package

• For general purpose and switching

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

Value

Unit

Collector Base Voltage

BC846DW

BC847DW

BC848DW

Collector Emitter Voltage

BC846DW

V_CEO

BC847DW

BC848DW

Emitter Base Voltage

BC846DW

BC847DW

BC848DW

V_EBO

Collector Current

I_C

I_CM

P_tot

T_j

100

200

Peak Collector Current

Total Power Dissipation¹⁾

Junction Temperature

Storage Temperature Range

250

150

℃

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance from Junction Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 07/03/2023 Rev: 02

12 3 4 5

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