Datasheet > BC847C

BC847C

更新时间： 2024-11-24 22:53:59

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	68K
描述
NPN General Purpose Transistor

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数据手册

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BC847C 数据手册

BC847B / BC847C

Transistors

NPN General Purpose Transistor

BC847B / BC847C

!Features

!External dimensions (Units : mm)

1) BV^CEO< 45V (I^C=1mA)

2) Complements the BC857B.

2.9 0.2

+0.2

−0.1

0.95

1.9 0.2

0.45 0.1

0.95 0.95

!Package, marking, and Packaging specifications

(2)

(1)

Part No.

Packaging type

Marking

BC847B

SST3

G1F

BC847C

SST3

G1G

0~0.1

0.2Min.

(3)

Code

T116

+0.1

0.15

+0.1

−0.06

Basic ordering unit (pieces)

3000

0.4

−0.05

All terminals have the same dimensions

ROHM : SST3

(1) Emitter

(2) Base

(3) Collector

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

0.1

0.2

∗

Collector power dissipation

Junction temperature

0.35

150

°C

Storage temperature

Tstg

−55~+150

∗ When mounted on a 7×5×0.6mm ceramic board.

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

BV^CBO

BVCEO

BVEBO

−

=50µA

=1mA

=50µA

−

µA

CB=30V

CB=30V, Ta=150°C

Collector cutoff current

ICBO

−

0.58

200

420

−

200

0.25

0.6

0.77

450

800

−

=10mA/0.5mA

=100mA/5mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

CE(sat)

BE(on)

−

MHz

CE/I

C=5V/10mA

C=5V/2mA

BC847B

hFE

BC847C

Transition frequency

CE=5V, I

CB=−10V, I

EB=0.5V, I

=−20mA, f=100MHz

Collector output capacitance

Emitter input capacitance

Cob

Cib

−

=0, f=1MHz

C=0, f=1MHz

!Electrical characteristic curves

The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and

PN2222A.

1/1

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