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BC847CD87Z PDF预览

BC847CD87Z

更新时间: 2024-11-25 21:17:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
6页 83K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

BC847CD87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.55
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC847CD87Z 数据手册

 浏览型号BC847CD87Z的Datasheet PDF文件第2页浏览型号BC847CD87Z的Datasheet PDF文件第3页浏览型号BC847CD87Z的Datasheet PDF文件第4页浏览型号BC847CD87Z的Datasheet PDF文件第5页浏览型号BC847CD87Z的Datasheet PDF文件第6页 
BC846A  
BC846B  
BC847A  
BC847B  
BC847C  
C
C
E
E
B
B
SOT-23  
Mark: 1A. / 1B.  
SOT-23  
Mark: 1E. / 1F. / 1G.  
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, general purpose  
amplifier applications at collector currents from 1.0 µA to 50 mA.  
Sourced from Process 07.  
3
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
65  
45  
80  
50  
6.0  
V
V
V
V
V
BC846 series  
BC847 series  
BC846 series  
BC847 series  
VCES  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current - Continuous  
100  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
*BC846 / BC847  
PD  
Total Device Dissipation  
Derate above 25 C  
325  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  
1997 Fairchild Semiconductor Corporation  

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