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BC847BPN-Q PDF预览

BC847BPN-Q

更新时间: 2024-11-15 11:15:55
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 262K
描述
45 V, 100 mA NPN/PNP general-purpose transistorProduction

BC847BPN-Q 数据手册

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BC847BPN-Q  
45 V, 100 mA NPN/PNP general-purpose transistor  
17 June 2021  
Product data sheet  
1. General description  
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
Low collector capacitance  
Low collector-emitter saturation voltage  
Closely matched current gain  
Reduces number of components and board space  
No mutual interference between the transistors  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
General-purpose switching and amplification  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCEO  
collector-emitter  
voltage  
open base  
-
-
45  
V
IC  
collector current  
DC current gain  
-
-
-
100  
450  
mA  
hFE  
VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
200  
 
 
 
 

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