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BC847BQC-Q PDF预览

BC847BQC-Q

更新时间: 2024-11-15 11:11:23
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 255K
描述
45 V, 100 mA NPN general-purpose transistorProduction

BC847BQC-Q 数据手册

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BC847xQC-Q series  
45 V, 100 mA NPN general-purpose transistor  
Rev. 2 — 21 May 2021  
Product data sheet  
1. General description  
NPN general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-  
Mounted Device (SMD) plastic package with side-wettable flanks.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT8009  
PNP complement:  
JEDEC  
BC847AQC-Q  
BC847BQC-Q  
BC847CQC-Q  
MO-340CA  
BC857AQC-Q  
BC857BQC-Q  
BC857CQC-Q  
2. Features and benefits  
High power dissipation capability  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Smaller footprint compared to conventional leaded SMD packages  
Low package height of 0.5 mm  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
General-purpose switching and amplification  
Space restricted applications  
4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
45  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC847AQC-Q  
open base  
-
-
-
-
-
-
100  
200  
mA  
mA  
ICM  
single pulse; tp ≤ 1 ms  
VCE = 5 V; IC = 2 mA  
hFE  
110  
200  
420  
-
-
-
220  
450  
800  
BC847BQC-Q  
BC847CQC-Q  
 
 
 
 

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