Datasheet > BC847BFN3

BC847BFN3

更新时间： 2024-09-26 08:49:47

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管
页数	文件大小	规格书
5页	126K
描述
NPN GENERAL PURPOSE TRANSISTORS

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BC847BFN3 数据手册

BC847BFN3

NPN GENERAL PURPOSE TRANSISTORS

Unit : inch(mm)

DFN 3L

CURRENT

45 Volts

250 mWatts

VOLTAGE

0.042(1.05)

0.037(0.95)

FEATURES

• General purpose amplifier applications

• NPN epitaxial silicon, planar design

• Collector current IC = 100mA

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

0.002(0.05) MAX.

Case: DFN 3L, Plastic

Terminals: Solderable per MIL-STD-750, Method 2026

Marking: AE

0.013(0.32)

0.008(0.22)

0.013(0.32)

0.008(0.22)

0.014(0.36)

ABSOLUTE RATINGS

Parameter

Symbol

Value

Units

Collector - Emitter Voltage

VCEO

VCBO

VEBO

Collector - Base Voltage

Emitter - Base Voltage

6.0

100

Collector Current - Continuous

THERMAL CHARACTERISTICS

Parameter

Symbol

Value

Units

Max Power Dissipation (Note 1)

TOT

250

Thermal Resistance , Junction to Ambient

Junction Temperature

R^JA

500

^OC/W

^OC

-55 to +150

Storage Temperature

STG

^OC

Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

REV.0.4-AUG.17.2009

PAGE . 1

12 3 4 5

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